Research on the plasma cleaning process of the thick film HIC assembly stage of the plasma cleaning equipment:
Plasma cleaning equipment Plasma cleaning is an emerging cleaning technology that can be widely used in various processes in the field of microelectronics processing, especially in the assembly and packaging process. It can effectively remove oxides and organics on the surface of electronic components. It helps to improve the adhesion performance of conductive adhesive, the wettability of solder paste, the bonding strength of aluminum wire bonding, and the packaging reliability of metal casing.
Compared with other types of assembly and packaging forms (such as PCB, IC, etc.), thick film hybrid integrated circuits (HIC) have their own characteristics, which are mainly manifested in: usually small and medium batches, multiple assembly forms, irregular layouts, etc. Because of these characteristics, the cleaning in the assembly stage also has special requirements, and the plasma cleaning equipment plasma cleaning just provides a better solution for this.
In the past, the ultrasonic cleaning process was usually used for assembly cleaning. Although this cleaning method has certain advantages in removing heavy organic contamination and particulate contamination, it also has poor cleaning consistency and high cleaning power, which is easy to be cleaned. It is more difficult to clean small-sized objects. The cleaning medium is expensive and has many shortcomings such as pollution.

With the increase in the scale of microelectronic assembly and packaging and the further improvement of product quality requirements, there is an urgent need to apply plasma cleaning equipment technology to the microelectronic assembly and packaging process. Plasma cleaning is a technical process to improve surface activity. Inputting radio frequency energy ionizes the gas into a plasma state containing positive and negative charged particles such as positive ions, negative ions, and free electrons, and uncharged neutral particles. These plasmas are chemically The surface of the device to be cleaned is treated with physical action to realize the removal of stains and contaminants at the molecular level.
For thick film HIC, due to the large number of processing steps and the relatively complicated process, the pollution generated is basically typical oxidative pollution and organic pollution. Plasma cleaning can improve the characteristics of the bonding interface and improve the consistency and reliability of the bonding quality. The use of argon plasma cleaning can effectively remove the oxide on the surface of the chip and the substrate.
Plasma cleaning equipment technology can remove oxides and organic contamination on the surface of the substrate, improve the wettability and activity of the substrate and the bonding area of the components, help improve the bonding strength of the components, and reduce the adhesion between the substrate and the conductive The contact resistance between the connecting materials.
　　The thick film HIC treated by plasma cleaning equipment can effectively improve the reliability of bonding and component bonding. For the relatively mature bonding and bonding processes, the improvement of the quality of thick film HIC by plasma cleaning is largely reflected in improving the consistency of processing and making the circuit more reliable.